Fundamentals of Semiconductor Devices

Fundamentals of Semiconductor Devices

1st Edition

By Betty Anderson and Richard Anderson

  • Copyright: 2005

  • Publication Date: Mar 12 2004

  • ISBN 10: 0072369779

  • ISBN 13: 9780072369779

Description

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Fundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electro

Fundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. With this emphasis, the reader will appreciate the underlying physics behind the equations derived and their range of applicability. The author?s clear writing style, comprehensive coverage of the core material, and attention to current topics are key strengths of this book.

  • Language: English – lower case

  • Imprint: WCB/McGraw-Hill

  • Dimension: 6.8 x 10.1

  • Page Count: 816

New Features

  • First 4 Parts of the book (5 Parts total) are followed by ?Supplements? which contain related material to enhance the course. The content in these supplements is not required for the understanding of the basic principles of device operation.
  • Quantum mechanics is introduced in the chapters of Part 1. For additional content, more extensive material can be found in Supplement ?A? to Part 1.
  • Up-to-date mathematical formulations, which are appropriate for modern devices.
  • Extensive use of energy band diagrams to explain (qualitatively) device operation.
  • The differences in electron and hole mobilities (and diffusion coefficients) for majority carriers and for minority carriers are discussed. These differences are important to accurately predict the behavior of minority carrier devices (BJTs) vs. majority carrier devices (some FETs).
  • Emphasis on heterojunctions due to their increased use in field effect devices, bipolar devices, and optoelectronic devices.
  • SPICE is introduced for the determination of device I-V characteristics and for steady-state and transient analysis of simple circuits.
  • Detailed, easy-to-follow examples throughout. These examples go beyond giving a feel for the numerical value for the quantities involved but, also, provide an improved understanding of a physical mechanism under consideration.
  • Electrical parameters of MOSFETS and BJTS are compared in order to solidify the ?big picture? and to aid in making critical design decisions.
  • Solid pedagogy in the form of illustrations, summaries, review questions, reading lists, and more.
  • An instructor website, http://www.mhhe.com/andersonanderson, contains the Solutions Manual and PowerPoint slides (for instructor use only.)

Format

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Part 1 Electronic Properties of Materials

1 Electron Energy and States in Semiconductors

2 Homogeneous Semiconductors

3 Current Flow in Homogeneous Semiconductors

4 Non-Homogeneous

Table of Contents

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Part 1 Electronic Properties of Materials

1 Electron Energy and States in Semiconductors

2 Homogeneous Semiconductors

3 Current Flow in Homogeneous Semiconductors

4 Non-Homogeneous Semiconductors

Part 2 Diodes

5 Prototype pn Homojunctions

6 Additional Considerations for Diodes

Part 3 Field Effect Transistors

7 The MOSFET

8 Additional Considerations for FETs

Part 4 Bipolar Transistors

9 Bipolar Junction Devices: Statics

10 Time-Dependent Analysis of BJTs

Part 5 Optoelectronic Devices

11 Optoelectronic Devices

Appendix A Physical Constants

Appendix B List of Symbols

Appendix C Fabrication

Appendix D Density of States Function, Density of States Effective Mass, Conductivity Effective Mass

Appendix E Useful Integrals

Appendix F Useful Equations

Appendix G: List of Suggested Readings

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About the Authors

Betty Anderson

Richard Anderson